A team of scientists from Tohoku University and SII Semiconductor Corporation has worked together to develop a technology for an ultraviolet light sensor which is best applicable for smartphones as well as wearable devices. In the present era, which can be called as Internet of Things (IoT) era, the technology and latest developments can be a boom to the human life.

As written in Phys.org, Professor Shigetoshi Sugawa and Associate Professor Rihito Kuroda from the Tohoku University Graduate School of Engineering has developed the new ultraviolet light sensor technology for smartphones and wearable devices. These researchers have used silicon semiconductors for detecting and measuring the intensity of UV-A (315~400nm) and UV-B (280~315 nm) wavebands of light. These wavebands cause sunburns and skin blemishes.

As of late, there's been developing enthusiasm inside the healthcare industry in the avoidance of sunburns and skin imperfections. All things considered, a simple estimation of UV light using an ultraviolet light sensor in a cell phone or a wearable gadget could be of extraordinary advantage to the healthcare industry and can also be a stylish solution.

Tohoku University reported that need to gauge imperceptible UV light is additionally expanding in mechanical fields, where hardware, for example, UV curing machines and printers utilizing UV reparable ink are being utilized more every now and again now than any time in recent memory. As per the reports, SII Semiconductor Corporation has planned for the shipment starting of the developed ultraviolet light sensor technology for wearable devices and smartphones around the season of spring 2018.

Expectedly, the silicon photodiode ultraviolet light sensor utilizes optical channels that cut off undesired visible light wavebands. By using the differential phantom reaction of silicon photodiodes with high and low UV light sensitivities, the analysts could build up a sensor with UV run specific detecting abilities without utilizing an optical channel or filter. This structure is capable of obtaining a higher sensitivity by the prevention of decreased or limited incident UV light intensity to the sensor.